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Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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Defect Reduction Paths in SiC Epitaxy
- J. Zhang, D.M. Hansen, V.M. Torres, B. Thomas, G. Chung, H. Makoto, I. Manning, J. Quast, C. Whiteley, E.K. Sanchez, S. Mueller, M.J. Loboda, H. Wang, F. Wu, M. Dudley
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1693 / 2014
- Published online by Cambridge University Press:
- 11 June 2014, mrss14-1693-dd01-05
- Print publication:
- 2014
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This paper discusses formation mechanisms and potential paths to reduce defect density in current SiC epitaxy technology. Comprehensive optimization efforts have resulted in defect density measured by laser light scattering below 0.5 cm-2 for 30 um thick epi wafers. Possible approaches to reduce basal plane dislocations and mitigate interfacial dislocations are discussed. The progress in epitaxy defect reduction has been made on the foundation of the high quality 100mm substrates. The average and median BPD density is 700 cm-2 and 500 cm-2, respectively, and a low TSD density is also achieved simultaneously with both average and median values around 350 cm-2. High quality and low stress 150mm substrates have been obtained with very low TSD density of <150 cm-2.
Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC
- H. Wang, F. Wu, S. Byrappa, S. Shun, B. Raghothamachar, M. Dudley, E. K. Sanchez, G. Chung, D. Hansen, S. G. Mueller, M. J. Loboda
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 13 June 2012, mrss12-1433-h03-06
- Print publication:
- 2012
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The combined application of section and projection topography carried out using synchrotron white beam radiation can be a powerful tool for the determination of the three-dimensional configurations of defects in single crystals. In this paper, we present examples of the application of this combination of techniques to the analysis of defect configurations in PVT-grown 4H-SiC wafers cut perpendicular and parallel to the growth axis. Detailed correlation between section and projection topography of threading screw dislocations (TSDs) is presented with particular emphasis being laid on the determination of the signs of the dislocations. Further, information can also be determined regarding the position of the dislocations within the crystal depth. In addition, similar correlation is presented for threading edge dislocations (TEDs) and basal plane dislocations (BPDs). The section topography images of dislocations can comprise direct, intermediary and dynamical contrast and all three types are observed. The application to the study of stacking faults will be also discussed in detail.
Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC
- M. Dudley, H. Wang, F. Wu, S. Byrappa, S. Shun, B. Raghothamachar, E. K. Sanchez, G. Chung, D. Hansen, S. G. Mueller, M. J. Loboda
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 13 June 2012, mrss12-1433-h03-03
- Print publication:
- 2012
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Synchrotron topography studies are presented of the behavior of growth dislocations and deformation-induced dislocations in 4H-SiC single crystals. The growth dislocations include those in threading orientation with line directions approximately along c with Burgers vectors of a, c, and na+mc (where n and m are integers) while the deformation-induced dislocations include those with line directions confined to the basal plane with Burgers vectors of a and Shockley partial dislocations with Burgers vectors of 1/3<1-100> as well as those with line directions in the {1-100} prismatic planes with Burgers vectors of a. Processes leading to the nucleation of the growth dislocations are discussed as well as their deflection onto the basal plane during crystal growth in a reversible process. This latter process can lead to the conversion of segments of the deflected growth dislocations into deformation induced dislocations. In some cases this can lead to dislocation multiplication via the Hopping Frank-Read source mechanism and in others to the motion of single Shockley partial dislocations leading to Shockley stacking fault expansion. Studies are also presented of interactions between threading growth dislocations with c-component of Burger’s vector facilitated by climb processes which are mediated by interactions with non-equilibrium concentrations of vacancies. This can lead to reactions whereby complete or partial dislocation Burgers vector annihilation occurs.
The feeding of raw and cooked potatoes and sugar beet to laying pullets
- H. Temperton, F. J. Dudley
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- Journal:
- The Journal of Agricultural Science / Volume 33 / Issue 4 / October 1943
- Published online by Cambridge University Press:
- 27 March 2009, pp. 204-206
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An account is given of experimental work on the feeding of uncooked and cooked potatoes and sugar beet to laying stock. The available literature on the use of these foods for poultry is reviewed and an explanation is offered for the poor results which have generally followed the use of raw potatoes.
A description is given of an experiment in which there were two control groups fed on mash, two groups on 3 oz. mash and 8 oz. potatoes daily, uncooked for one group and steamed for the other, and two groups on 3 oz. mash and 8 oz. sugar beet daily, uncooked in one case and steamed in the other.
Stresses experienced by AlN films grown on sapphire
- Jie Bai, J. Bai, V.L. Tassev, M. Lal Nakarmi, W. Sun, X. Huang, M. Dudley, H. Zhang, D. F. Bliss, J. Lin, H. Jiang, J. Yang, M. Asif Khan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF26-01
- Print publication:
- 2005
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The evolution of stress during the MOCVD growth of AlN thin films on sapphire substrates under both low and high temperature conditions has been evaluated. The final stress state of the films is assumed to consist of the summation of stresses from three different sources: (1) the stress which arises from residual lattice mismatch between film and substrate i.e. that which persists after partial relaxation by misfit dislocation formation. The extent of relaxation is determined from High Resolution TEM analysis of the substrate/film interface; (2) the stress arising from the coalescence of the 3D islands nucleated in this high mismatch epitaxy process. This requires knowledge of the island sizes just prior to coalescence and this was provided by AFM studies of samples grown under the conditions of interest; and (3) the stress generated during post-growth cooling which arises from the differences in thermal expansion coefficient between AlN and sapphire. The final resultant stress, comprising the summation of stresses arising from these three sources, is found to be tensile in the sample grown at lower temperature and compressive in the sample grown at higher temperature. These results are in general qualitative agreement with results of TEM and High resolution X-ray diffraction (HRXRD) studies, which show evidence for tensile and compressive stresses in the low temperature and high temperature cases, respectively.
The Mechanism of Twinning in Zincblende Structure Crystals: New Insights on Polarity Effects From a Study of Magnetic Liquid Encapsulated Czochralski Grown Inp Single Crystals
- M. Dudley, B. Raghothamachar, Y. Guo, X. R. Huang, H. Chung, D. J. Larson, Jr., D. T. J. Hurle, D. F. Bliss, V. Prasad, Z. Huang
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- Journal:
- MRS Online Proceedings Library Archive / Volume 524 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 65
- Print publication:
- 1998
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Synchrotron White Beam X-ray Topography (SWBXT) and synchrotron X-ray anomalous scattering have been employed to determine the polarity of {111} edge facets, anchored to the three phase boundary (TPB) on which twinning is observed to nucleate in Magnetic Liquid Encapsulated Czochralski (MLEC) grown sulfur doped, <001> InP single crystals. Analysis of the results indicates that both the formation of edge facets and the nucleation of twins occur preferentially on {111}P faces. Of the four possible sets of edge facets, belonging to the {111}P form, which are oriented so as to be thermodynamically favored to be anchored to the TPB, two can give rise to a {115} to {111}P external shoulder facet conversion upon twinning, while the other two can give rise to a {114} to {110} conversion. For these cases, twinning is only observed when the {111}P edge facets are anchored to the TPB in a region where the shoulder angle is close to 74.21° or 70.53°, facilitating the production of the {115} and {114} external shoulder facets, respectively, prior to twinning. These observations are discussed in light of calculated surface energies of the various internal and external facets.
Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals
- S. Wang, M. Dudley, C. H. Carter, Jr., V. F. Tsvetkov, C. Fazi
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- Journal:
- MRS Online Proceedings Library Archive / Volume 375 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 281
- Print publication:
- 1994
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Synchrotron white beam X-ray topography, along with optical microscopy and scanning electron microscopy, has been used to characterize structural defects which are potentially detrimental to device performance in PVT 6H-SiC single crystals. Line defects running along the [0001] axis, known as “micropipes”, were studied extensively. Detailed analysis of topographic image contrast associated with “micropipes”, based on the kinematical theory of X-ray diffraction, established that the so-called “micropipes” are screw dislocations with large Burgers vectors.
Changes in plasma fibronectin during acute nutritional deprivation in healthy human subjects
- S. J. D. Chadwick, A. J. W. Sim, H. A. F. Dudley
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- Journal:
- British Journal of Nutrition / Volume 55 / Issue 1 / January 1986
- Published online by Cambridge University Press:
- 09 March 2007, pp. 7-12
- Print publication:
- January 1986
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1. Plasma fibronectin, a glycoprotein, is an opsonin of the reticuloendothelial system.
2. In ten healthy volunteers starved for 4.5 d, daily measurements showed a rapid reduction in plasma fibronectin, no alteration in either C3 or plasma transferrin and, at the end of the starvation period, an elevated serum albumin.
3. On refeeding, plasma fibronectin rapidly returned to its prestarvation level but plasma transferrin was significantly reduced and did not recover by the end of the study.
4. Changes in plasma fibronectin may be a sensitive index of nutritional status. The reduction of plasma fibronectin in short-term starvation may compromise host defence tolerance of injury and sepsis.